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5.(Pb0.97La0.02)(Zr,Sn,Ti)O3厚膜准同型相界附近介电和疲劳行为的研究

日期:2016-10-15 10:42:11 点击:

高洪成郝喜红

(内蒙古科技大学 材料与冶金学院包头014000)

关键词: 溶胶-凝胶; 反铁电厚膜; MPB; 介电性能; 疲劳行为

中图分类号:O484.5    文献标识码:A

摘要: 采用凝胶溶胶法在 Pt(111)/Ti/SiO2/Si 衬底上制备了位于正交反铁电 - 四方反铁电 (AFEO-AFET) 和四方反铁电 - 铁电 (AFET-FE) 准同型相界 (MPB) 附近的 (Pb0.97La0.02)(Zr0.80Sn0.20-xTix)O3(x = 0.06, 0.11) 厚膜。系统的研究了其微观结构、介电性质和疲劳行为。两种厚膜具有为纯的钙钛矿结构,表面均匀致密且粗糙度较小。介电性能、铁电性能测试结果表明:两个组分展现出不同的介电性质和相转变行为。室温下,位于正交反铁电 - 四方反铁电 (AFEO-AFET)MPB 附近的厚膜表现出反铁电行为,而位于四方反铁电 - 铁电 (AFET-FE)MPB 附近的厚膜具有铁电行为。此外,场强和温度对位于不同准同型相界的两种厚膜表现出不同的疲劳行为。

Dielectric properties and polarization fatigue of (Pb0.97La0.02)(Zr,Sn,Ti)O3 thick films at morphotropic phase boundary

Hongcheng Gao, Xihong Hao

(Inner Mongolia Key Laboratory of Advanced Ceramic Materials and Devices, School of Materials and Metallurgy, Inner MongoliaUniversity of Science and Technology, Baotou 014010, China )

Keywords: sol-gel; AFE thick films; MPB; dielectric properties; polarization fatigue

Abstract: (Pb0.97La0.02)(Zr0.80Sn0.20-xTix)O3 (PLZST) thick films with x = 0.06, 0.11 were successfully prepared by a sol-gel method, which were located in the orthorhombic AFE-tetragonal AFE (AFEO-AFET) and tetragonal AFE-ferroelectric (AFET-FE)morphotropic phase boundary (MPB), respectively. The microstructure, dielectric properties and polarization fatigue behavior were investigated in detail. Both samples have smooth, dense, void-free microstructure and small surface roughness, but they illustrate different dielectric properties and phase transition performance under the function of external electric field and temperature. At room temperature, PLZST films located at AFEO-AFET MPB showed AFE nature, while the films at AFET-FE MPB displayed FE character. Moreover, it was found that the two films also illustrated quite a different polarization fatigue behavior under the function of external electric field and temperature.

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