3.The effect on dielectric and energy storage performances ofPbZrO3—based ceramics via K + doping

Abstract:

A series of K + doped (Pb 0. 88 -0. 5x La 0. 07 Na 0. 03 Kx )(Zr 0. 88 Ti 0. 12 )O 3 (abbreviated as Kx ,x = 0,0. 02,0. 04,0. 06,and0. 08)antiferroelectric ceramics were fabricated by the tapecasting method. The effects of K + doping on the phase structure,microstructure,dielectric properties,and energy storage performance were systematically investigated. The K 0. 04 ceramic exhibited a high dielectric constant of 1 050 and a remarkable dielectric tunability of 95% . Under an electric field of 130 kv·cm - 1 at room temperature,it achieved a high recoverable energy density (Wrec )of 2. 94 J·cm - 3 and an efficiency (η)of 81. 93% . Importantly,this compositiondemonstrated excellent thermal stability,with a variation in energy storage density of less than 15% over a temperature range from roomtemperature to 125 °C . These results demonstrate that K + doping effectively enhances the dielectric and energy storage properties ofPbZrO 3 based ceramics,offering valuable insights for designing dielectric materials for DClink capacitor applications.

Keywords: K + doping;antiferroelectric ceramics;dielectric properites;energystorage performances